Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-17T06:42:20.806Z Has data issue: false hasContentIssue false

Point-Contact-Spectroscopy of VSi2, Nbsi2 and Tasi2

Published online by Cambridge University Press:  03 September 2012

U. Gottlieb
Affiliation:
Centre de Recherches sur les Très Basses Températures, CNRS, BP 166, 38042 Grenoble Cédex 9, France Laboratoire des Matériaux et du Génie Physique, ENSPG, INPG, BP 46, 38402 St. Martin d'Hères, France
O.P. Balkashin
Affiliation:
Laboratoire des Champs Magnétiques Intenses, CNRS-MPI, BP 166, 38042 Grenoble Cédex 9, France
A.G.M. Jansen
Affiliation:
Laboratoire des Champs Magnétiques Intenses, CNRS-MPI, BP 166, 38042 Grenoble Cédex 9, France
O. Laborde
Affiliation:
Centre de Recherches sur les Très Basses Températures, CNRS, BP 166, 38042 Grenoble Cédex 9, France Laboratoire des Champs Magnétiques Intenses, CNRS-MPI, BP 166, 38042 Grenoble Cédex 9, France
R. Madar
Affiliation:
Laboratoire des Matériaux et du Génie Physique, ENSPG, INPG, BP 46, 38402 St. Martin d'Hères, France
Get access

Abstract

We present point-contact-spectroscopy measurements on VSi2, NbSi2 and TaSi2 high quality single crystals. These three compounds crystallise in the same hexagonal structure (structure C40, space group P6222) and they are isoelectronic. Phonon spectra deduced by this technique are in good agreement with phonon parameters previously obtained from resistivity and low temperature specific heat measured on the same samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] see for example: Nava, F., Tu, K. N., Thomas, O., Senateur, J. P., Madar, R., Borghesi, A., Guizzetti, G., Gottlieb, U., Laborde, O., and Bisi, O., Mater. Sci. Rep. 9, 141 (1993)Google Scholar
[2] Lasjaunias, J. C., Laborde, O., Gottlieb, U., Madar, R., and Thomas, O., J. Low Temp. Phys. 92, 335 (1993)Google Scholar
[3] Gottlieb, U., Laborde, O., Thomas, O., Rouault, A., Senateur, J. P., and Madar, R., Appl Surf. Sci. 53, 247 (1991)Google Scholar
[4] Gottlieb, U., Sulpice, A., Madar, R., and Laborde, O., to be published in J.Phys. C : Cond. Mat.Google Scholar
[5] Yanson, I. K., Zh. Eksp. Teor. Fiz. 66, 1035 (1974) (Sov. Phys.-JEPT 39, 506 (1974)), A. G. M. Jansen, A. P. van Gelder, and P. Wyder, J. Phys. C: Solid St. Phys. 13, 6073 (1980)Google Scholar
[6] Duif, A. M., Jansen, A. G. M., and Wyder, P., J. Phys.: Condens. Matter. 1,3157 (1989)Google Scholar
[7] Gottlieb, U., Lasjaunias, J. C., Tholence, J. L., Laborde, O., Thomas, O., and Madar, R., Phys. Rev. B45, 4803 (1992)Google Scholar
[8] Thomas, O., Senateur, J. P., Madar, R., Laborde, O., and Rosencher, E., Sol. State Commun. 55, 629 (1985)CrossRefGoogle Scholar
[9] Kittel, C., Introduction to Solid State Physics, 3rd Edition, John Wiley & Sons, New York, 1967, Chapt. 5 and 6Google Scholar
[10] McMillan, W. L., Phys. Rev. 167, 331 (1968)Google Scholar
[11] Lysykh, A. A., Yanson, I. K., Shklyarevskii, O. I., and Naidyuk, Yu. G., Solid State Commun. 35, 987 (1980)Google Scholar