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Plasma-assisted Atomic Layer Deposition of TiN Films at low Deposition Temperature for High-aspect Ratio Applications

Published online by Cambridge University Press:  01 February 2011

S.B.S. Heil ,
E. Langereis ,
F. Roozeboom ,
A. Kemmeren ,
N.P. Pham ,
P.M. Sarro ,
M.C.M. van de Sanden  and
W.M.M. Kessels
S.B.S. Heil
Affiliation:
Eindhoven University of Technology, Dept. of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
E. Langereis
Affiliation:
Eindhoven University of Technology, Dept. of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
F. Roozeboom
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands 3Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB Delft, The Netherlands
A. Kemmeren
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands 3Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB Delft, The Netherlands
N.P. Pham
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands 3Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB Delft, The Netherlands
P.M. Sarro
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands 3Delft University of Technology, DIMES-ECTM, P.O. Box 5053, 2600 GB Delft, The Netherlands
M.C.M. van de Sanden
Affiliation:
Eindhoven University of Technology, Dept. of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
W.M.M. Kessels
Affiliation:
Eindhoven University of Technology, Dept. of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

A plasma-assisted atomic layer deposition (PA-ALD) process of titanium nitride (TiN) using TiCl4 precursor dosing and H2/N2 plasma exposure is presented. In situ spectroscopic ellipsometry revealed a growth rate at 400 °C of ∼0.7 A/cycle independent of precursor dosing. Varying the plasma exposure time changed the stoichiometry [N]/[Ti] of the films within the range ∼0.93-1.15. At 100 °C a relatively low chlorine impurity level (∼2 at. %) and low resistivity (∼200 νΔcm) were obtained for a ∼45 nm thick film. The growth rate was found to be considerably lower (∼0.3 Å/cycle) at this temperature. Using TEM imaging we found that PAALD TiN films can be deposited conformally in 20:1 aspect-ratio features (1.5 Êm width) but that the step coverage still needs to be improved, probably by a prolonged plasma exposure step.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B6.4
Copyright
Copyright © Materials Research Society 2005

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References

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