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Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD

Published online by Cambridge University Press:  10 February 2011

M. Seelmann-Eggebert ,
H. Zimmermann ,
H. Obloh ,
R. Niebuhr  and
B. Wachtendorf
M. Seelmann-Eggebert
Affiliation:
Fraunhofer Institut Für Angewandte Festkörperphysik, Tullastr 72, D-79108 Freiburg
H. Zimmermann
Affiliation:
Fraunhofer Institut Für Angewandte Festkörperphysik, Tullastr 72, D-79108 Freiburg
H. Obloh
Affiliation:
Fraunhofer Institut Für Angewandte Festkörperphysik, Tullastr 72, D-79108 Freiburg
R. Niebuhr
Affiliation:
Aixtron Gmbh, Kackertstr. 15–17, D-52072 Aachen, Germany
B. Wachtendorf
Affiliation:
Aixtron Gmbh, Kackertstr. 15–17, D-52072 Aachen, Germany
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Abstract

The influence of plasma and thermal treatments on the structure and composition of sapphire (00–1) surfaces have been studied by hemispherically recorded x-ray photoelectron spectroscopy in view of substrate preparation for the epitaxy of GaN. Producing well-ordered surfaces, O2 plasma based treatments are found to efficiently remove surface contamination. AlN films with good short-range order are obtained by a simple high temperature nitridation step in the MOCVD reactor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 193
Copyright
Copyright © Materials Research Society 1997

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References

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