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Plasma Assisted Oxidation of Si at Temperatures below 800°C

Published online by Cambridge University Press:  28 February 2011

C. K. Williams  and
A. Reismanu
C. K. Williams
Affiliation:
Microelectronics Center of North Carolina, P.O.Box 12889, Research Triangle Park, NC 27709
A. Reismanu
Affiliation:
Microelectronics Center of North Carolina, P.O.Box 12889, Research Triangle Park, NC 27709 Department of Electrical and Computer Engineering, Box 7911, North Carolina State University, Raleigh, NC 27695-7911
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Abstract

A system for plasma assisted oxidation of Si at temperatures below 800°C is described.Oxides grown in this system have an unusual thickness versus time relationship.The first 110 nm of oxide exhibit a t1/2 dependence.Any additional growth shows a t1/3 dependence.Pressure, oxygen concentration, and rf power are all important parameters in determining the growth rate and uniformity of the oxide layers.Breakdown measurements on these oxide layers show that post oxidation annealing is necessary if these oxides are to compete with thermal oxides.The type of annealing is very important in determining the breakdown voltage.The results of various annealing procedures are described.The effects of heating the wafers independent of the heat generated by the plasma, and the frequency dependence of the growth are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 79
Copyright
Copyright © Materials Research Society 1986

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