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Pixel-to-point Transfer: a Process for Integrating Individual GaN-based Light-emitting Devices in o Heterogeneous Microsystems

Published online by Cambridge University Press:  02 August 2011

Z.S. Luo ,
T. Sands ,
N.W. Cheung ,
J.A. Chediak ,
J. Seo  and
L.P. Lee
Z.S. Luo
Affiliation:
Department of Materials Science & Engineering
T. Sands
Affiliation:
Department of Materials Science & Engineering School of Materials Engineering and School of Electrical & Computer Engineering, Purdue University, W. Lafayette, IN 47907.
N.W. Cheung
Affiliation:
Department of Electrical Engineering
J.A. Chediak
Affiliation:
Department of Materials Science & Engineering
J. Seo
Affiliation:
Applied Science & Technology Graduate Group
L.P. Lee
Affiliation:
Department of Bioengineering, University of California, Berkeley, Berkeley, CA 94720.
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Abstract

A novel ultra-low-thermal-budget pixel-to-point transfer process based on the excimer laser lift-off and Pd-In transient-liquid-phase bonding scheme was developed for flexible and precise placement of single pixels of GaN-based light-emitting diodes (LED) on target substrates. The transfer was accomplished by (1) temporarily bonding the light-emitting diode (LED) pixel to a specially designed pick-up rod with sapphire substrates facing up using Super Glue., (2) removing the sapphire substrates using laser lift-off, and (3) registering and permanently bonding the LED pixel to the designated area in the target substrates using Pd-In transient-liquid-phase bonding. An oxygen plasma was employed to remove the Super Glue® residue before further microfabrication and system integration was performed. The capability of this technique was demonstrated in the integration of GaN-based LED pixels with pre-fabricated PIN photodiode chips and thin-film bandedge filters, which formed the non-disposable subsystems of a fluorescence-based lab-on-a-chip system. The performance of these integrated LED pixels and the integrated microsystems has been assessed by evaluating the fluorescence intensity as a function of equivalent fluorescein dye concentration using disposable polydimenthyl siloxane(PDMS) microfluidic channels. GaN LEDs with peak emission at 463 nm were used to excite 515nm fluorescence from FluoSpheres® carboxylate-modified fluorescent microspheres (40nm in diamters).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G4.8
Copyright
Copyright © Materials Research Society 2003

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