Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-22T13:31:38.670Z Has data issue: false hasContentIssue false
  • English
  • Français

Piezoresponse Measurements for Pb(Zr,Ti)O3 Island Structure Using Scanning Probe Microscopy

Published online by Cambridge University Press:  21 March 2011

H. Fujisawa ,
K. Morimoto ,
M. Shimizu ,
H. Niu ,
K. Honda  and
S. Ohtani
H. Fujisawa
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671-2201, JAPAN
K. Morimoto
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671-2201, JAPAN
M. Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671-2201, JAPAN
H. Niu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, Shosha 2167, Himeji, Hyogo 671-2201, JAPAN
K. Honda
Affiliation:
Fujitsu Laboratory Ltd, 10-1 Wakamiya Morinosato, Atsugi, Kanagawa 243-0197, JAPAN
S. Ohtani
Affiliation:
Fujitsu Laboratory Ltd, 10-1 Wakamiya Morinosato, Atsugi, Kanagawa 243-0197, JAPAN
Get access

Abstract

Piezoresponse measurements using scanning probe microscopy (SPM) were performed for island structures at the initial growth stage of Pb(Zr,Ti)O3 (PZT) (Zr/Ti=0/100, 24/76 and 74/26) thin films prepared by metalorganic chemical vapor deposition(MOCVD). Deposition times were varied from 5s to 7min to control the size of PZT islands. When deposition times were shorter than 3min, (111)-oriented triangular-shaped PZT islands were observed before forming a continuous film. The width and height of PZT islands deposited at 3min were 160 and 70nm for Zr/Ti = 0/100, 100 and 30nm for Zr/Ti = 24/76, and 80 and 20nm for Zr/Ti = 74/26, respectively. The size of islands decreased with increasing the Zr composition. Hysteresis loops due to polarization switching were observed in the phase difference and displacement of piezoresponse measured using scanning probe microscopy (SPM). This result proves that nano-size PZT islands have weak ferroelectricity. The minimum width and height of PZT islands which showed ferroelectricity were 70 and 30nm for Zr/Ti=24/76.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC10.4.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Uemoto, Y., Oyo-Buturi, 67,1256 (1998). [in Japanese]Google Scholar
2. Fujisawa, H., Nakashima, S., Kaibara, K., Shimizu, M. and Niu, H., Jpn. J. Appl. Phys., 5392, 38 (1999).Google Scholar
3. Shimizu, M., Nakashima, S., Kaibara, K., Fujisawa, H. and Niu, H., Ferroelectrics, 241, 183 (2000).10.1080/00150190008224990Google Scholar
4. Shimizu, M., Fujisawa, H. and Niu, H., Mater.Res.Soc.Symp.Proc., Mater.Res.Soc.Symp.Proc., 596, 259 (2000).10.1557/PROC-596-259Google Scholar
5. Shimizu, M., Sugiyama, M., Fujisawa, H. and Shiosaki, T., Jpn. J. Appl. Phys., 33, 5167 (1994).10.1143/JJAP.33.5167Google Scholar
6. Shimizu, M., Sugiyama, M., Fujisawa, H., Hamano, T., Shiosaki, T. and Matsushige, K., J. Crys. Growth, 145, 226 (1994).Google Scholar
7. Fujisawa, H., Shimizu, M., Niu, H., Honda, K. and Ohtani, S., Mater.Res.Soc.Symp.Proc., 596, 321 (2000).10.1557/PROC-596-321Google Scholar
8. Fujisawa, H., Morimoto, K., Shimizu, M., Niu, H., Honda, K. and Ohtani, S., Jpn. J. Appl. Phys., 39, 5446 (2000).10.1143/JJAP.39.5446Google Scholar
9. Shimizu, M., Fujisawa, H., Sugiyama, M. and Shiosaki, T., Integr. Ferroelectr., 6 (1995) 155.10.1080/10584589508019361Google Scholar
10. Hidaka, T., Maruyama, T., Saitoh, M., Mikoshiba, N., Shimizu, M., Shiosaki, T., Wills, L. A., Hiskes, R., Dicarolis, S. A. and Amano, J., Appl. Phys. Lett., 68, 2358 (1996).10.1063/1.115857Google Scholar
11. Gruverman, A., Auciello, O. and Tokumoto, H., Appl. Phys. Lett., 3191, 68 (1996).Google Scholar
12. Hong, S., Colla, E. L., Kim, E., Taylor, D. V., Tagantsev, A. K., Muralt, P. and Setter, N., J. Appl. Phys., 86, 607 (1999).10.1063/1.370774Google Scholar
13. Berlincourt, D. A., Cmolik, C. and Jaffe, H., Proc. IRE, 48, 220 (1960).10.1109/JRPROC.1960.287467Google Scholar