Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T08:21:01.871Z Has data issue: false hasContentIssue false
  • English
  • Français

Picosecond Dynamics of Photoexcitations in Amorphous Multilayer Structures

Published online by Cambridge University Press:  26 February 2011

H. T. Grahn ,
Z. Vardeny ,
H. J. Maris ,
J. Tauc  and
B. Abeles
H. T. Grahn
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
Z. Vardeny
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
H. J. Maris
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
J. Tauc
Affiliation:
Department of Physics and Division of Engineering, Brown University, Providence, RI 02912
B. Abeles
Affiliation:
Exxon Research and Engineering Company, Annandale, NJ 08801
Get access

Abstract

We report on measurements of ultrafast relaxation processes in transmission and reflection in amorphous multilayer structures consisting of a-Si:H, a-SiNx:H, a-SiOx:H, and a-Ge:H. The decays recorded in transmission in the a-Si:H/a-SiNx:H and a-Si:H/a-SiOx:H multilayers depend strongly on the silicon sublayer thickness and are interpreted in terms of carrier transport to and trapping at interfacial defects. In the a-Si:H/a-Ge:H multilayers we observe oscillations in reflectivity due to standing acoustic waves with a frequency that depends on the repeat distance of the multilayer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 265
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tiedje, T. and Abeles, B., Appl. Phys. Lett. 45, 179 (1984).CrossRefGoogle Scholar
2. Roxlo, C. B., Abeles, B., and Tiedje, T., Phys. Rev. Lett. 52, 1994 (1984).CrossRefGoogle Scholar
3. Roxlo, C. B. and Abeles, B., Phys. Rev. B34, 2522 (1986).CrossRefGoogle Scholar
4. Maley, N. and Lanin, J. S., Phys. Rev. B31, 5577 (1985).CrossRefGoogle Scholar
5. Santos, P., Hundhausen, M., and Ley, L., Phys. Rev. B33, 1516 (1986).CrossRefGoogle Scholar
6. Abeles, B. and Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).CrossRefGoogle Scholar
7. Ibaraki, N. and Fritzsche, H., Phys. Rev. B30, 5791 (1984).CrossRefGoogle Scholar
8. Grahn, H. T., Stoddart, H. A., Zhou, T., Vardeny, Z., and Taue, J., Proc. 18th Int. Conf. on the Physics of Semiconductors, Stockholm, 1986, in press.Google Scholar
9. Fork, R. L., Greene, B. I., and Shank, C. V., Appl. Phys. Lett. 38, 671 (1981).CrossRefGoogle Scholar
10. Abeles, B., Yang, L., Persans, P. D., Stasiewski, H. S., and Lanford, W., Appl. Phys. Lett. 48, 168 (1986).CrossRefGoogle Scholar
11. Persans, P., Abeles, B., Scanlon, J., and Stasiewski, H., Proc. 17th Int. Conf. on the Physics of Semiconductors, edited by Chadi, J. D. and Harrison, W. A. (Springer Verlag, New York, 1985), p. 499.Google Scholar
12. Taue, J., in Tetrahedrally-Bonded Amorphous Semiconductors, edited by Adler, D. and Fritzsche, H. (Plenum Press, New York, 1985), p. 345.Google Scholar
13. Grahn, H. T., Thomsen, C., and Taue, J., Opt. Com. 58, 226 (1986).CrossRefGoogle Scholar
14. Thomsen, C., Grahn, H. T., Maris, H. J., and Taue, J., Phys. Rev. B34, 4129 (1986).CrossRefGoogle Scholar
15. Rytov, S. M., Akust. Zh. 2, 71 (1956) [Sov. Phys. Acous. 2, 67 (1956)].Google Scholar