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Physical Vapor Deposition of Cu(In,Ga)Se2Films for Industrial Application

Published online by Cambridge University Press:  21 March 2011

T. Wada
Affiliation:
Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520-2194, Japan
S. Nishiwaki
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
Y. Hashimoto
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
T. Negami
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
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Abstract

Cu(In,Ga)Se2 thin films were prepared by physical vapor deposition. The CIGS films were deposited by three kinds of method. The 1st was “2-stage process” in which (In,Ga)2Se3 precursor layer was deposited on Mo coated soda-lime glass at the 1st stage, and then exposed to Cu and Se fluxes to form CIGS films at the 2nd stage. The 2nd method was an ordinary “3-stage process”. The 3rd method was “2-stage deposition and post-annealing process” in which CIGS films were deposited at low substrate temperatures and then the obtained CIGS precursor films were annealed in Se flux at high temperatures. A solar cell using a CIGS film prepared at 400 °C by the “2-stage process” showed an efficiency of 11.8 % and that using a CIGS film deposited at 350 °C by the “3-stage process” showed an efficiency of 12.4 %. The CIGS films deposited by the “2-stage deposition and post-annealing process” have similar microstructures to the device quality CIGS films deposited by the “3-stage process” at high temperatures. The solar cell with an MgF2/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an efficiency of 17.5 % (Voc=0.634 V, Jsc=36.4 mA/cm2, FF=0.756). The thin CIGS films with a smooth and flat surface can be fabricated by the “2-stage deposition and post-annealing process”. The solar cell using a 0.7μm CIGS absorber layer showed an efficiency of over 12 % and a large open circuit voltage of 0.677 V.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Contreras, M. A., Egass, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F. and Noufi, R., Prog. in Photovolt: Res. Appl. 7, 311 (1999).Google Scholar
2. Nigami, T., Hashimito, Y. and Nishiwaki, S., Solar Energy Materials and Solar Cells 67, 331 (2001).Google Scholar
3. Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Negami, T. and Wada, T., J. Mater. Res. 14, 4514 (1999).Google Scholar
4. Kohara, N., Nishiwaki, S., Negami, T. and Wada, T., Jpn. J. Appl. Phys. 39, 6316 (2000).Google Scholar
5. Nishiwaki, S., Satoh, T., Hashimoto, Y., Negami, T. and Wada, T., J. Mater. Res. 16, 394 (2001).Google Scholar
6. Wada, T., Nishiwaki, S., Hashimoto, Y. and Negami, T., Proceeding of 16 th European Photovoltaic Solar Energy Conference (held at Glasgow, UK), p.329 (2000).Google Scholar
7. Nishiwaki, S., Satoh, T., Hayashi, S., Hashimoto, Y., Shimakawa, S., Negami, T. and Wada, T., Solar Energy Materials and Solar Cells 67, 217 (2001).Google Scholar
8. Nakada, T., Onishi, R. and Kunioka, A., Solar Energy Materials and Solar Cells 35, 209 (1994).Google Scholar
9. Kushiya, K., Shimizu, A., Yamada, A. and Konagai, M., Jpn. J. Appl. Phys. 34, 54 (1995).Google Scholar
10. Kohara, N., Negami, T., Nishitani, M. and Wada, T., Jpn. J. Appl. Phys. 34, L1141 (1995).Google Scholar
11. Wada, T., Hashimoto, Y., Nishiwaki, S., Sato, T., Hayashi, S., Negami, T. and Miyake, H., Solar Energy Materials and Solar Cells 67, 305 (2001).Google Scholar
12. Negami, T., Nishiwaki, S., Hashimoto, Y., Kohara, N. and Wada, T., Proc. 2 nd World Conference on Photovoltaic Solar Energy Conversion (held at Vienna, Austria), p.1181 (1998).Google Scholar