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Phototransport Properties of a-SiC:H Alloys

Published online by Cambridge University Press:  15 February 2011

G. Nery ,
A. Ramirez ,
O. Resto ,
S. Z. Weisz ,
Y. Lubianiker  and
I. Balberg
G. Nery
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
A. Ramirez
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
O. Resto
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
S. Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
Y. Lubianiker
Affiliation:
Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
I. Balberg
Affiliation:
Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
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Abstract

We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 583
Copyright
Copyright © Materials Research Society 1995

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References

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