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Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures

Published online by Cambridge University Press:  11 February 2011

M. Geddo ,
G. Guizzetti ,
R. Pezzuto ,
A. Polimeni ,
M. Capizzi ,
M. Bissiri ,
G. Baldassarri Höger von Högersthal ,
D. Gollub  and
A. Forchel
M. Geddo
Affiliation:
INFM-UdR Pavia, Via Bassi 6, I-27100 Pavia and Dipartimento di Fisica dell'Università di Parma, Viale delle Scienze 7a, I-43100 Parma, Italy
G. Guizzetti
Affiliation:
INFM-Dip. di Fisica “A. Volta”, Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
R. Pezzuto
Affiliation:
INFM-Dip. di Fisica “A. Volta”, Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
A. Polimeni
Affiliation:
INFM-Dip. di Fisica, Università degli Studi di Roma “La Sapienza”, Piazzale A. Moro 2, I-00185 Roma, Italy
M. Capizzi
Affiliation:
INFM-Dip. di Fisica, Università degli Studi di Roma “La Sapienza”, Piazzale A. Moro 2, I-00185 Roma, Italy
M. Bissiri
Affiliation:
INFM-Dip. di Fisica, Università degli Studi di Roma “La Sapienza”, Piazzale A. Moro 2, I-00185 Roma, Italy
G. Baldassarri Höger von Högersthal
Affiliation:
INFM-Dip. di Fisica, Università degli Studi di Roma “La Sapienza”, Piazzale A. Moro 2, I-00185 Roma, Italy
D. Gollub
Affiliation:
Universität Würzburg, Technische Physik, Am Hubland 97074 Würzburg, Germany
A. Forchel
Affiliation:
Universität Würzburg, Technische Physik, Am Hubland 97074 Würzburg, Germany
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Abstract

We report on photoreflectance measurements performed in the 0.8–1.6 eV photon energy range in as grown and hydrogenated InxGa1-xAs1-yNy/GaAs single quantum wells grown on GaAs substrates by molecular beam epitaxy. In the hydrogenated samples, a blue-shift of all the QW spectral features and a surprising change with temperature in the nature of the lowest energy transition are found. These features are related to the interaction of H with N atoms. An increase in the binding energy of the heavy-hole exciton upon N introduction into the InxGa1-xAs lattice has been measured also and explained in terms of an increase in the electron effective mass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.31
Copyright
Copyright © Materials Research Society 2003

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References

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