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Photoreflectance Characterisation of Reactive Ion Etched Silicon

Published online by Cambridge University Press:  22 February 2011

M. Murtagh ,
J. T. Beechinor ,
P. A. F. Herbert ,
P.V. Kelly ,
G. M. Crean  and
C. Jeynes
M. Murtagh
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
J. T. Beechinor
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
P. A. F. Herbert
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
P.V. Kelly
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
G. M. Crean
Affiliation:
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
C. Jeynes
Affiliation:
Dept. of Electronic Engineering, University of Surrey, Guildford GU2 5XH, England
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Abstract

Reactive ion etching (RIE) of p-type 2-3 †cm resistivity silicon (100) was characterised using Photoreflectance (PR), Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Isochronal (5 minutes) etching was performed at various DC etch biases (0-500V) using a SiCl4 etch chemistry. The substrate etch rate dependence on applied bias was determined using mechanical profilometry. A distinct shift in the A3–A1 Si transition and significant spectral broadening of the room temperature PR spectra was observed as a function of etch bias. Photoreflectance results are correlated with RBS, SE and etch rate analysis. It is demonstrated that the PR spectra reflect a complex, competitive, plasma-surface interaction during the RIE process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 167
Copyright
Copyright © Materials Research Society 1994

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