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Photolytic Deposition of Insb Films

Published online by Cambridge University Press:  26 February 2011

S. P. Zuhoski ,
K. P. Killeen  and
R. M. Biefeld
S. P. Zuhoski
Affiliation:
Sandia National Laboratories Outstanding Student Summer Program
K. P. Killeen
Affiliation:
Sandia National Laboratories, P. 0. Box 5800, Albuquerque, NM 87185
R. M. Biefeld
Affiliation:
Sandia National Laboratories, P. 0. Box 5800, Albuquerque, NM 87185
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Abstract

Films of InSb were deposited on GaAs <100> substrates at room temperature by excimer laser photolysis at 193 or 248 m of a mixture of trimethylindium (TMIn) and trimethylantimony (TMSb) in a hydrogen carrier medium. These films were compared to thermally grown MOCVD InSb films by optical microscopy and x-ray analysis and found to be stoichiometric polycrystalline, InSb. In situ UV absorption spectroscopy has been used for the first time on an MOCVD system to monitor and control the partial pressures of the metalorganic reactants during deposition. This latter diagnostic was found to be critically important since parasitic reactions cause depletion of TMIn during transport from the source bubbler to the growth chamber.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 313
Copyright
Copyright © Materials Research Society 1998

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References

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