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Photoluminescence study of defects induced by B10H14 ions

Published online by Cambridge University Press:  21 March 2011

Noriaki Toyoda ,
Takaaki Aoki ,
Jiro Matsuo ,
Isao Yamada ,
Kazumi Wada  and
Lionel C. Kimerling
Noriaki Toyoda
Affiliation:
Material Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A. Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, Kamigori, Ako, Hyogo, 678-1205, JAPAN
Takaaki Aoki
Affiliation:
Ion Beam Engineering Experimental Lab., Kyoto University, Sakyo, Kyoto 606-0081, JAPAN.
Jiro Matsuo
Affiliation:
Ion Beam Engineering Experimental Lab., Kyoto University, Sakyo, Kyoto 606-0081, JAPAN.
Isao Yamada
Affiliation:
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, Kamigori, Ako, Hyogo, 678-1205, JAPAN
Kazumi Wada
Affiliation:
Material Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Lionel C. Kimerling
Affiliation:
Material Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

Defect formation in Si by B10H14 (decaborane) ion implantation has been investigated with photoluminescence measurement. An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B10H14+ implantation. W-line center is considered as an interstitial aggregate and usually observed after ion implantation with subsequent low-temperatureannealing in the case of atomic ion implantation. As W-line is observed from as-implanted Si, the defect formation with B10H14 is expected to be different from that of B+ implantation with the same energy per atom. The energy dependence of W-line intensity is similar to that of diffusivity enhancement after rapid thermal annealing. Molecular dynamics simulation and Rutherford backscattering spectrometry channeling experiment suggest that one B10H14 implantation creates a larger number of dislocated Si atoms than that of B+ implantation with the same energy per atom. This characteristic of B10H14 implantation may cause the different defect reactions in subsequent annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J20.4
Copyright
Copyright © Materials Research Society 2001

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