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Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching

Published online by Cambridge University Press:  29 December 2011

Yoshitaka Nakano ,
Retsuo Kawakami ,
Masahito Niibe ,
Atsushi Takeichi ,
Takeshi Inaoka  and
Kikuo Tominaga
Yoshitaka Nakano
Affiliation:
Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
Retsuo Kawakami
Affiliation:
The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
Masahito Niibe
Affiliation:
University of Hyogo, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan
Atsushi Takeichi
Affiliation:
The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
Takeshi Inaoka
Affiliation:
The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
Kikuo Tominaga
Affiliation:
The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Abstract

We investigated, by employing a photoluminescence technique, the etching damage introduced in near-surface regions of GaN by Ar and Kr plasmas and clarified the differences between the damage characteristics of these regions for the two plasma etching cases. For Ar plasma, the shallow donor-acceptor pair emission at ~3.28 eV was significantly weakened; additionally, a broad blue luminescence band arose at approximately ~3.0 eV. In contrast, for Kr plasma under high gas pressure, we found the recovery of the damage to the same level as the as-grown crystallinity. These differences in the damage characteristics for the two plasma etching cases probably depend upon which atom (N or Ga) is preferentially etched in these cases.

Keywords

III-Vnitrideelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-36
Copyright
Copyright © Materials Research Society 2011

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References

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