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Photoluminescence Studies of p-type GaN:Mg Co-doped with Oxygen

Published online by Cambridge University Press:  17 March 2011

R. Y. Korotkov ,
J. M. Gregie  and
B. W. Wessels
R. Y. Korotkov
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, IL 60208
J. M. Gregie
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, IL 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, IL 60208
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Abstract

The low temperature photoluminescence (PL) of Mg-doped GaN co-doped with oxygen is investigated. Two PL bands are observed at low temperature at 2.5 and 2.8 eV in the p-type oxygen co-doped samples. Both the 2.5 eV and 2.8 eV bands are attributed to donor-acceptor (DA) transitions involving deep donors of different origin and a shallow MgGa acceptor. The integrated intensity of the 2.8 eV band in p-type GaN decreases as the oxygen partial pressure is increased. The decrease is attributed to reduced compensation by deep native donors. The two bands are not formed in n-type (n > 1019 cm−3) GaN:Mg over-doped with oxygen indicating that the deep donors responsible for these transitions have high formation energies in n-type material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.39
Copyright
Copyright © Materials Research Society 2001

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References

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