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Photoluminescence of InP/GaAs/Si Heterostructures

Published online by Cambridge University Press:  26 February 2011

V.P. Mazzi ,
N.M. Haegel ,
S.M. Vernon  and
V.E. Haven
V.P. Mazzi
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, 405 Hilgard Ave., Los Angeles, Ca 90024
N.M. Haegel
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, 405 Hilgard Ave., Los Angeles, Ca 90024
S.M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
V.E. Haven
Affiliation:
Spire Corporation, Bedford, MA 01730
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Abstract

Low temperature photoluminescence results from MOCVD epitaxial InP grown on GaAs/Si substrates are presented as a function of thickness of the GaAs buffer layer. As a consequence of thermal expansion mismatch of the heterostructure, the InP layer contains residual stress which causes the band gap to shift and splits the valence band degeneracy of the mj = ± 3/2 and the mj = ± 1/2 bands. Both the shifting and splitting phenomena are clearly seen in tite PL results and are shown to depend on the GaAs buffer layer thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 267
Copyright
Copyright © Materials Research Society 1989

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References

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