Hostname: page-component-7479d7b7d-k7p5g Total loading time: 0 Render date: 2024-07-11T08:35:01.187Z Has data issue: false hasContentIssue false

Photoluminescence of Fs-GaN Treated in Alcoholic Sulfide Solutions

Published online by Cambridge University Press:  15 February 2011

Y.V. Zhilyaev
Affiliation:
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021, Russia
M.E. Kompan
Affiliation:
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021, Russia
E.V. Konenkova
Affiliation:
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021, Russia
S.D. Raevskii
Affiliation:
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021, Russia
Get access

Abstract

Results are presented on the photoluminescence of n-GaN (T=300 K) after surface treatment with sulfide (Na2S and (NH4)2S) solutions in water or isopropyl alcohol.

It has been shown that the intensity of the n-GaN photoluminescence band is enhanced as a result of the surface treatment with alcoholic sulfide solutions, this enhancement being greater for a strongly basic Na2S solution than for a weakly basic (NH4)2S solution.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Onkubo, M., Jpn. J. Appl. Phys. 36, L955 (1997).Google Scholar
2. Mileham, J.R., Pearson, S.J., Abemathy, C.R., Mackenzie, Y.D., Shul, R.J., Kilcoyne, S.R., Appl. Phys. Lett. 67(8), 11191121 (1995).Google Scholar
3. King, S.W., Barnak, J.P., Bremser, M.D., Tracy, K.M., Ronning, C., Davis, R.F., Nermanich, R.J., J. Appl. Phys. 84(9), 52485260 (1998).Google Scholar
4. Sandroff, C.J., Nottonburg, R.N., Bischoff, J.C., Shat, R., Appl. Phys. Lett. 51(1), 3335 (1987).Google Scholar
5. Bessolov, V.N., Ivankov, A.F., **nenkova, *.V., Lebedev, *.V., Techn. Phys. Lett. 21(1), 2021 (1995).Google Scholar
6. Bel'kov, V.V., Botnaryuk, V.M., Fedorov, L.M., Goncharuk, I.N., Novikov, S.V., Ulin, V.P., Zhilyaev, Y.V., Cheng, T.S., Jeffs, N.J., Foxon, C.T., Katsavets, N.I., Harrison, I., J. Crystal Growth 187, 29 (1998).Google Scholar
7. Kompan, M. E., Shabanov, I. Yu., Phys. Solid State 39(7), 10301034 (1997).Google Scholar
8. Bessolov, V.N., **nenkova, *.V., Lebedev, *.V., Phys. Solid State 39(1), 5457 (1997).Google Scholar
9. Bessolov, V.N., Lebedev, M.V., Binh, N.M., Friedrich, M., Zahn, D.R.T., Semicond. Sci. Technol. 13(6), 611614 (1998).Google Scholar
10. Zolper, J.C., Crawford, M.H., Howard, A., Rames, J., Hersee, S.D., Appl. Phys. Lett., 68(2), 200203 (1996).Google Scholar