Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-28T15:43:47.012Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence in Nitrogen-Rich a-SiNx:H

Published online by Cambridge University Press:  21 February 2011

D. Chen ,
J.M. Viner ,
P.C. Taylor  and
J. Kanicki
D. Chen
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
J.M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
J. Kanicki
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
Get access

Abstract

We report the measurement of photoluminescence (PL) from nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6:H) films. Excitation at 4.8 eV gives a PL spectrum of approximately Gaussian lineshape centered at 2.9 eV with a full width at half maximum of 1.4 eV. The PL intensity at 2.9 eV fatigues under continuous 4.8 eV excitation, but may be restored by thermal annealing or photobleaching with light of energy ≥ 2 eV. For emission at 2.9 eV, the PL excitation spectrum in the range 3.0 to 5.2 eV follows the a-SiN1.6:H film optical absorption edge at low energy and then decreases with a maximum at approximately 5.4 eV. The PL results are discussed within the framework of a negative effective electron-electron correlation energy (negative Ueff) for the dominant defect (silicon atom bonded to three nitrogen atoms).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 661
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Warren, W.L., Rong, F.C., Poindexter, E.H., Gerarci, G.J. and Kanicki, J., J. Appl. Phys. 70, 346 (1991).Google Scholar
2. Warren, W.L., Lenahan, P.M. and Kanicki, J., J. Appl. Phys. 70, 2220 (1991).Google Scholar
3. Warren, W.L., Kanicki, J., Rong, F.C. and Poindexter, E.H., J. Electrochem. Soc. 139, 880 (1992).Google Scholar
4. Crowder, M.S., Tober, E.D. and Kanicki, J., Appl. Phys. Lett. 57, 1995 (1990).Google Scholar
5. Kriek, D.T., Lenahan, P.M. and Kanicki, J., J. Appl. Phys. 64, 3558 (1988).Google Scholar
6. Warren, W.L., Kanicki, J., Dong, F.C., Poindexter, E.H. and McWhorter, P.J., Appl. Phys. Lett, (accepted).Google Scholar
7. Kanicki, J., Sankaran, M., Gelatos, A., Crowder, M.S. and Tober, E.D., Appl. Phys. Lett. 576, 598 (1990).Google Scholar
8. Seager, C.H. and Kanicki, J., Appl. Phys. Lett. 57, 1378 (1990).Google Scholar
9. Tober, E.D., Kanicki, J. and Crowder, M.S., Appl. Phys. Lett. 59, 1723 (1991).Google Scholar
10. Lenahan, P.M., Kriek, D.T. and Kanicki, J., Appl. Surf. Sci. 39, 392 (1989).Google Scholar
11. Anderson, P.W., Phys. Rev. Lett. 34, 953 (1975).Google Scholar
12. Street, R.A. and Mott, N.T., Phys. Rev. Lett. 35, 1293 (1975).Google Scholar
13. Warren, W.L., Lenahan, P.M. and Curry, S.E., Phys. Rev. Lett. 65, 207 (1990).Google Scholar
14. Warren, W.L., Kanicki, J., Robertson, J. and Lenahan, P.M., Appl. Phys. Lett. 59, 1699 (1991).Google Scholar
15. Carius, R., Jahn, K., Siebert, W. and Fuhs, W., J. Lum. 31+32, 354 (1984).Google Scholar
16. Austin, I.G., Jackson, W.A., Searle, T.M. and Bhat, P.K., Phil. Mag. B 52, 271 (1985).Google Scholar
17. Vasilev, V.V., Mikhailovskii, I.P. and Svitashev, K.K., Sov. Phys. Tech. Phys. 33, 510 (1989).Google Scholar
18. Nadolinnyi, V.A., Vasilev, V.V. and Mikhailovskii, I.P., Phys. Stat. Sol. (a) 116, K105 (1989).Google Scholar
19. Poolton, N.R.J. and Cros, Y., J. Phys. I France 1, 1335 (1991).Google Scholar
20. Voke, N. and Kanicki, J., Mat. Res. Soc. Symp. Proc. 68, 175 (1986).Google Scholar
21. Kanicki, J. and Wagner, P., in Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by Kapoor, V.J. and Hankins, K.T. (Electrochemical Society, Pennington, NJ, 1987), Vol. 87–10, p. 261.Google Scholar
22. Bishop, S.G., Strom, U. and Taylor, P.C., Phys. Rev. B 15, 2278 (1977).Google Scholar
23. Chen, D., Viner, J.M. and Taylor, P.C., unpublished.Google Scholar
24. Kanicki, J., Warren, W.L., Seager, C.H., Crowder, M.S. and Lenahan, P.M., J. Non-Cryst. Solids, 137+138, 291 (1991).Google Scholar