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Photoluminescence from n-(p-) type impurity doped Si nanocrystals

Published online by Cambridge University Press:  17 March 2011

Minoru Fujii ,
Atsushi Mimura ,
Shinji Hayashi ,
Dmitri Kovalev  and
Frederick Koch
Minoru Fujii
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Atsushi Mimura
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Shinji Hayashi
Affiliation:
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Dmitri Kovalev
Affiliation:
Technische Universität Mänchen, Physik-Department E16, D-85747 Garching, Germany
Frederick Koch
Affiliation:
Technische Universität Mänchen, Physik-Department E16, D-85747 Garching, Germany
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Abstract

Effects of impurity (P and B) doping on the photoluminescence (PL) properties of Si nanocrystals (nc-Si) in SiO2 thin films are studied. It is shown that with increasing P concentration, PL intensity first increases and then decreases. In the P concentration range where PL intensity increases, quenching of the defect-related PL is observed, suggesting that dangling-bond defects are passivated by P doping. On the other hand, in the range where PL intensity decreases, optical absorptiondue to the intravalley transitions of free electrons generated by P doping appears. The generation of free electrons andthe resultant three-body Auger recombination of electron-hole pairs is considered to be responsible for theobserved PL quenching. In the case of B doping, the behavior is much different. With increasing B concentration, PL intensity decreases monotonously. By combining the results obtained for P and B doped samples, theeffects of donor and acceptor impurities on the PL properties of nc-Si are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F9.2.1
Copyright
Copyright © Materials Research Society 2001

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