Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T23:57:30.032Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence from nano porous silicon prepared by photoelectrochemical etching of n-type single crystalline silicon

Published online by Cambridge University Press:  17 March 2011

Chi-Woo Lee ,
Buem-Suck Kim ,
Dong-Il Kim ,
Nam-Ki Min  and
Suk-In Hong
Chi-Woo Lee
Affiliation:
College of Sciences and Technology, Korea University, Jochiwon, Chungnam 339-700, Korea
Buem-Suck Kim
Affiliation:
College of Sciences and Technology, Korea University, Jochiwon, Chungnam 339-700, Korea
Dong-Il Kim
Affiliation:
College of Sciences and Technology, Korea University, Jochiwon, Chungnam 339-700, Korea
Nam-Ki Min
Affiliation:
College of Sciences and Technology, Korea University, Jochiwon, Chungnam 339-700, Korea
Suk-In Hong
Affiliation:
College of Engineering, Korea University, Anamdong, Seoul 136-701, Korea
Get access

Abstract

The influence of operating parameters in producing light-emitting porous silicon materials was investigated in ethanolic solutions of hydrofluoric acid. Photoluminescence spectra depended on applied potential, the intensity and wavelength of illumination, and electrolyte concentration. When the applied potential and the illumination wavelength increased, the photoluminescence shifted to longer wavelength. Change in HF concentration resulted in different intensity in photoluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.29.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Canham, L.T.. Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
5. Smith, R.L. and Collins, S.D., J. Appl. Phys., 71, R1 (1992).Google Scholar
2. Hirschman, K.D., Tsybeskov, L., Duttagupta, S.P., and Fauchet, P.M., Nature, 384, 338 (1996).Google Scholar
3. Gelloz, B. and Koshida, N., in Advanced Luminescent Materials and Quantum Confinement edited by Cahay, M., Bandyopadhyay, S., Lockwood, D.J., Koshida, N., Leburton, J.P., Meyyappan, M. and Sakamoto, T. (Electrochemical Society, Pennington, NJ, PV99–2, 1999), p. 27.Google Scholar
4. Lee, C.-W., Kim, B.-S., Kim, D.-I., and Min, N.-K., in Physics and Chemistry of Luminescent Materials edited by Struck, C.W., Mishra, K.C. and Bartolo, B.D. (Electrochemical Society, Pennington, NJ, PV98–24, 1998), p. 333; J. Korean Phys. Soc., 35, S365 (1999).Google Scholar
7. Kang, Y. and Jorne, J., Electrochim. Acta, 43, 2389 (1998).Google Scholar
6. Foll, H., Appl. Phys. A, 53, 8 (1991).Google Scholar
8. Audet, S. and Steigerwald, J., in Semiconductor Sensors edited by Sze, S.M. (John Wiley & Sons, Inc. 1994), p. 271.Google Scholar
9. Thonissen, M., Berger, M.G., Arens-Fischer, R., Gluck, O., Kruger, M. and Luth, H., Thin Solid films, 276, 21 (1996).Google Scholar