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Photoluminescence due to Group IV impurities in ZnO

Published online by Cambridge University Press:  08 February 2012

J. Cullen ,
K. Johnston ,
M. O. Henry  and
E. McGlynn
J. Cullen
Affiliation:
School of Physical Sciences, Dublin City University, Collins Avenue, Dublin 9, Ireland
K. Johnston
Affiliation:
ISOLDE Collaboration, CERN, CH-1211 Geneva 23, Switzerland Technische Physik, Universitat des Saarlandes, D66041 Saarbrucken, Germany
M. O. Henry
Affiliation:
School of Physical Sciences, Dublin City University, Collins Avenue, Dublin 9, Ireland ISOLDE Collaboration, CERN, CH-1211 Geneva 23, Switzerland
E. McGlynn
Affiliation:
School of Physical Sciences, Dublin City University, Collins Avenue, Dublin 9, Ireland
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Abstract

We report the results of photoluminescence measurements on ZnO bulk crystals implanted with both stable and radioactive species involving the group IV impurities Ge, Si and Sn. We previously confirmed the identity of a line emerging at 3.3225 eV as being related to Ge and present here uniaxial stress data which show that the defect responsible has trigonal symmetry. Experiments with Si provide circumstantial evidence of a connection with the well-known line at 3.333 eV. Our measurements indicate that for the case of Sn on the Zn site luminescence is not observed. We also confirm that the I9 and I2 lines are due to substitutional In impurities.

Keywords

semiconductingoptical propertiesluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m02-05
Copyright
Copyright © Materials Research Society 2012

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References

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