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Photoluminescence Characteristics of HF-Treated Silicon Nanocrystals

Published online by Cambridge University Press:  15 February 2011

S. Nozaki ,
S. Sato ,
H. Ono  and
H. Morisaki
S. Nozaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1–5–1 Chofugaoka, Chofu-shi, Tokyo 182, Japan, nozaki@cas.uec.ac.jp
S. Sato
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1–5–1 Chofugaoka, Chofu-shi, Tokyo 182, Japan, nozaki@cas.uec.ac.jp
H. Ono
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1–5–1 Chofugaoka, Chofu-shi, Tokyo 182, Japan, nozaki@cas.uec.ac.jp
H. Morisaki
Affiliation:
Department of Communications and Systems, The University of Electro-Communications, 1–5–1 Chofugaoka, Chofu-shi, Tokyo 182, Japan, nozaki@cas.uec.ac.jp
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Abstract

Si nanocrystals were deposited in a helium atmosphere by the gas-evaporation technique. Their average size is 3.5 nm, much smaller than those of the Si nanocrystals deposited in an argon atmosphere. The PL spectra of the as-deposited and the HF-treated Si nanocrystals were compared. A great increase in the PL intensity of the HF-treated Si nanocrystals is attributed to the hydrogen passivation of Si surface dangling bonds. A good correlation between the amount of Si-O bonds and the PL intensity suggests that the oxygen-passivation of dangling bonds is required for the red-band PL. The PL spectra of the HF-treated Si nanocrystals resemble those of porous Si and clearly indicate that the HF-treated Si nanocrystals well simulate the porous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 159
Copyright
Copyright © Materials Research Society 1997

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References

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