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Photoemission Study of the Physical Nature of the InP Near-Surface Defect States

Published online by Cambridge University Press:  26 February 2011

K. K. Chin ,
R. Cao ,
T. Kendelewicz ,
K. Miyano ,
J. J. Yeh ,
S. Doniach ,
I. Lindau  and
W. E. Spicer
K. K. Chin
Affiliation:
University of Notre Dame, Dept. of Physics, Notre Dame, IN 46556
R. Cao
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
T. Kendelewicz
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
K. Miyano
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
J. J. Yeh
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
S. Doniach
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
I. Lindau
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
W. E. Spicer
Affiliation:
Stanford University, Stanford Electronics Laboratories, Stanford, CA 94305
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Abstract

The physical nature of the InP near-surface defect acceptor and donor states are studied by using photoemission spectroscopy. It is found that the In/n-InP(110) interface band bending does not start until the In coverage reaches about 0.3 monolayer (ML), while the In/p-InP(110) band bending is almost saturated at 0.3 ML. The annealing effect on the band bending of clean cleaved n-and p-type InP(llO) surfaces is also studied. It is found that annealing of the clean surface creates an irreversible band bending effect on the p-InP(110), but the n-InP(110) almost does not show any band bending after low temperature annealing. Based on these two striking differences in the band bending behavior of n- and p-type InP, it is proposed that the physical nature of InP near-surface defect acceptor and donor levels may be different and that phosphorus vacancies are the cause of p-InP surface Fermi level pinning.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 429
Copyright
Copyright © Materials Research Society 1987

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References

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