Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-19T21:14:59.778Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoemission Investigation on The Effect of H2S Plasma Exposure of InP

Published online by Cambridge University Press:  21 February 2011

Art J. Nelson ,
S. P. Frigo  and
R.R. Rosenberg
Art J. Nelson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
S. P. Frigo
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, WI 53589
R.R. Rosenberg
Affiliation:
Argonne National Laboratory/Advanced Photon Source, Argonne, IL 60439
Get access

Abstract

Synchrotron radiation soft x-ray photoemission spectroscopy was used to characterize the surface chemistry and the electronic structure of InP(100) before and after exposure to an H2S plasma. The low power plasma was generated with an electron cyclotron resonance (ECR) plasma source, using H2S, with the plasma exposure being performed at two temperatures. In-situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence band electronic structure and in the In4d, P2p and S2p core lines. The results revealed changes in surface chemistry and electronic properties and indicate that the H2S plasma exposure type converts the ptype InP(100) surface to an n-type surface. The magnitude of the band bending is dependent on the substrate temperature, resulting in a homojunction interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 181
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sandroff, C.J., Hegde, M.S. and Chang, C.C., J. Vac. Sci. Technol. B7, 841 (1989).Google Scholar
2. Iyer, R., Chang, R.R., Dubey, A. and Lile, D.L., J. Vac. Sci. Technol. B6, 1174 (1988).Google Scholar
3. Iyer, R., Chang, R.R. and Lile, D.L., Appl. Phys. Lett. 53, 134 (1988).Google Scholar
4. Yablonovitch, E., Sandroff, C.J., Bhat, R. and Gmitter, T., Appl. Phys. Lett. 51, 439 (1987).Google Scholar
5. Sandroff, C.J., Nottenburg, R.N., Bischoff, J.-C. and Bhat, R., Appl. Phys. Lett. 51, 33 (1987).CrossRefGoogle Scholar
6. Holber, W.M. and Forster, J., J. Vac. Sci. Technol. A8, 3720 (1990).Google Scholar
7. Constantine, C., Johnson, D., Pearton, S.J., Chakrabarti, U.K., Emerson, A.B., Hobson, W.S. and Kinsella, A.P., J. Vac. Sci. Technol. B8, 596 (1990).Google Scholar
8. Pearton, S.J., Hobson, W.S., Baiocchi, F.A., Emerson, A.B. and Jones, K.S., J. Vac. Sci. Technol. B8, 57 (1990).Google Scholar
9. Pearton, S.J., Chakrabarti, U.K., Kinsella, A.P., Johnson, D. and Constantine, C., Appl. Phys. Lett. 56, 1424 (1990).Google Scholar
10. Pearton, S.J. and Hobson, W.S., Appl. Phys. Lett. 56, 2186 (1990).CrossRefGoogle Scholar
11. Pearton, S.J., Hobson, W.S., Chakrabarti, U.K., Derkits, G.E. and Kinsella, A.P., J. Vac. Sci. Technol. B8, 1274 (1990).Google Scholar
12. Gendry, M., Durand, J., Cot, L. and Hollinger, G., Thin Solid Films 149, 313 (1987).Google Scholar
13. Nelson, A.J., Frigo, Sean and Rosenberg, R.A., J. Appl. Phys. 71, 6086 (1992).CrossRefGoogle Scholar
14. McKinley, A., Srivastava, G.P. and Williams, R.H., J. Phys. C: Solid State Phys. 13, 1581 (1980).Google Scholar
15. Ley, L., Pollak, R.A., McFeely, F.R., Kowalczyk, S.P. and Shirley, D.A., Phys. Rev. B9, 600 (1974).Google Scholar
16. Nelson, A.J., Frigo, Sean, Mancini, D., Rosenberg, R.A., J. Appl. Phys. 70, 5619 (1991).Google Scholar
17. Pauling, L., The Nature of the Chemical Bond (Cornell University, New York, 1967).Google Scholar
18. Wagman, D.D. et al. , J. Phys. Chem. Ref. Data 11(2), 165 (1982).Google Scholar
19. Bertrand, P.A., J. Vac. Sci. Technol. 18, 28 (1981).Google Scholar
20. Nelson, A., Geib, K. and Wilmsen, C.W., J. Appl. Phys. 54, 4134 (1983).Google Scholar
21. Pelavin, M., Hendrickson, D.N., Hollander, J.M. and Jolly, W.J., J. Phys. Chem. 74, 1116 (1970).Google Scholar
22. Lindberg, B.J., Hamrin, K., Johansson, G., Gelius, U., Fahlmann, A., Nordling, C. and Siegbahn, K., Phys. Scr. 1, 277 (1970).Google Scholar