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Photoelectron Emission Technique for the Surface Analysis of Silicon Wafer Covered with Oxide Film

Published online by Cambridge University Press:  01 February 2011

Takao Sakurai ,
Yoshihiro Momose ,
Masanori Kudou  and
Keiji Nakayama
Takao Sakurai
Affiliation:
Division of General Education, Ashikaga Institute of Technology, Tochigi 326-8558, Japan
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Abstract

A new analysis method using the photoelectron emission yield spectra near threshold has been developed to characterize solid surfaces exposed to ambient air. The application of the analysis method to the yield spectra for a Si (100) wafer surface covered with a native oxide film revealed that three emission peaks are cumulated on the basic yield spectrum line for the silicon. It was indicated that these peaks have a Gaussian-shaped density distribution and the energy levels are located at 5.37, 5.68, and 6.02 eV below the vacuum level, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.34
Copyright
Copyright © Materials Research Society 2005

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