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Photoelectrochemical etching of GaN

Published online by Cambridge University Press:  10 February 2011

C. Youtsey ,
G. Bulman  and
I. Adesida
C. Youtsey
Affiliation:
Microelectronics Laboratory and Dept. of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
G. Bulman
Affiliation:
CREE Research, Inc, Durham, NC 27713
I. Adesida
Affiliation:
Microelectronics Laboratory and Dept. of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 349
Copyright
Copyright © Materials Research Society 1997

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References

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