Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-22T01:03:44.914Z Has data issue: false hasContentIssue false

Photoconductivity of Pentacene Thin Film Transistors

Published online by Cambridge University Press:  21 March 2011

D. Knipp
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
D.K. Murti
Affiliation:
Xerox Research Center of Canada, Mississauga, ON, Canada L5K 2L1
B. Krusor
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
R. Apte
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
L. Jiang
Affiliation:
Xerox Research Center of Canada, Mississauga, ON, Canada L5K 2L1
J.P. Lu
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
B.S. Ong
Affiliation:
Xerox Research Center of Canada, Mississauga, ON, Canada L5K 2L1
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA94304
Get access

Abstract

A very large enhancement of the photoconductivity in pentacene transistors at negative gate voltages is observed. The enhancement is attributed to the separation of electron-hole pairs by the gate field and the consequent slow recombination. The ratio of photoconductivity to dark conductivity is approximately independent of mobility, for samples with a wide range of microstructure. The pentacene films were thermally deposited at different deposition rates and temperatures on silicon thermal oxide. The structure and the morphology of the films were studied by x-ray diffraction measurements and atomic force microscopy, and the influence of the deposition temperature on the morphology and structural properties is discussed. The size of the crystals is correlated with the crystalline bulk phase of the material, which increases with the deposition temperature and the film thickness. The mobility of the transistors increases with the size of the crystallites.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Campbell, R.B., Robertson, J.M., J. Trotter, Acta. Cryst. 14 (1961) 705.Google Scholar
[2] Karl, N., Organic Semiconductors, Landolt Boernstein/New Series Group III, Vol 17, edited by Madelung, O., Schulz, M., Weiss, H. (Springer, Berlin, 1985) Subvol. 17i pp. 106218.Google Scholar
[3] Schön, J.H., Berg, S., Kloc, Ch., Batlogg, B., Scince, Vol. 287,11 Feb. 2000, 1022–123.Google Scholar
[4] Sirringhaus, H., Kawase, T., Friend, R.H., Shimoda, T., Inbasekaran, M., Wu, W., Woo, E.P., Science 290, 15. Dec. 2000, 2123–6.Google Scholar
[5] Lin, Y.Y., Gundlach, D.J., Jackson, T.N., Nelson, S.F., IEEE ED Vol. 44 No. 8 (1997) 13251331.Google Scholar
[6] Street, R.A. (Ed.), Technology and Applications of Amorphous Silicon, Springer Series in Material Science Vol. 37, Springer-Verlag, Berlin (2000).Google Scholar
[7] Schön, J.H., Kloc, Ch., Batlogg, B., Appl. Phs. Letters, Vol. 77 No. 16, 24732475.Google Scholar
[8] Jentsch, T., Juepner, H. J., Brzezinka, K.W., Lau, A., Thin Solid Films 315 (1998) 273280.Google Scholar