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Photochemical Etching Effects on Optical Properties of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

Y. Kanemitsu ,
H. Uto ,
Y. Masumoto ,
T. Matsumoto ,
T. Futagi  and
H. Mimura
Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
H. Uto
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Y. Masumoto
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Matsumoto
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, Sagamihara, Kanagawa 229, Japan
T. Futagi
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, Sagamihara, Kanagawa 229, Japan
H. Mimura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, Sagamihara, Kanagawa 229, Japan
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Abstract

We have studied effects of hydrogen-termination on optical properties of porous Si. The hydrogen concentration in the samples was controlled by photochemical etching after the electrochemical anodization. Transmission electron microscopy examination shows that the size of Si crystallites in porous silicon ranges from 3 to 10 nm and no significant size changes occur by the photochemical etching process. The PL spectra, the PL excitation spectra, and the picosecond PL decay rate were sensitive to the photochemical etching process. Spectroscopic analysis suggests that the radiative recombination occurs at the near-surface region of the Si crystallites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 221
Copyright
Copyright © Materials Research Society 1993

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References

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