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Photobleaching of PL and Temperature Dependence of ESR in Nitrogen-Rich Amorphous Silicon Nitride Films

Published online by Cambridge University Press:  16 February 2011

D. Chen ,
J.M. Viner ,
P.C. Taylor  and
J.Z. Kanicki
D. Chen
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
J.M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
J.Z. Kanicki
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights NY 10598
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Abstract

We report measurements in nitrogen-rich a-SiNx:H (x > 1.3) of visible light photobleaching of photoluminescence (PL) that has been fatigued with UV light. We also review the temperature dependence of electron spin resonance (ESR) from a-SiN1.6:H films. The samples were prepared by plasma-enhanced chemical vapor deposition (PECVD) at 400 and 250° C. The optical gap of a-SiN1.6:H is about 5 eV. In PL experiments, the PL intensity fatigues under UV excitation, finally reaching a saturated value. By illuminating with visible light, the UV effect is partially bleached, that is, the PL intensity is partially restored. The bleaching light ranges in energy from 2.0 to 4.8 eV. With increasing bleaching-light energy, the reinduced PL intensity increases, reaches a maximum at a bleaching energy of 3.8 eV, and then quickly decreases. In ESR experiments, there exists a small ESR signal in as-deposited films before UV excitation and the variation of the ESR signal with temperature is similar to that of a-As.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 619
Copyright
Copyright © Materials Research Society 1994

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References

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