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Photo-Assisted Molecular Layer Epitaxy

Published online by Cambridge University Press:  26 February 2011

Jun-Ichi Nishizava  and
Toru KurabayashI
Jun-Ichi Nishizava
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Sendai, 980, Japan
Toru KurabayashI
Affiliation:
Semiconductor Research Institute, Kawauchi, Sendai, 980, Japan
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Abstract

Photoexcitation effects of GaAs vapor phase epitaxy have been studied. The growth rate is enhanced by irradiating the substrate zone with an exciier laser irradiation at 2 4 9 n m wavelength, however, the growth rate is reduced by irradiating the source Ga zone with a 249 or 222m exciier laser at températures below 650*C. Because of sharp wavelength dependence and from the result of the theoretical estimations, these effects have been concluded to be caused not by a therma1 -induced reaction but, rather, by photoinduced reactions.

Influence of photoexcitation of the film grown by molecular layer epitaxy has been also studied. Photoirradiation could be independently undertaken at different crystal growth steps, e.g. the irradiation duration could be synchronized with the time duration of each gases supply and exhaust. By this method “synchronized irradiation”, the quality of the epitaxial film and the surface morphology of epitaxial films grown by molecular layer epitaxy were improved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 275
Copyright
Copyright © Materials Research Society 1998

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References

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