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PHOTO- AND DARK CURRENT NOISE IN a-Si:H PIN DIODES AT FORWARD AND REVERSE BIAS

Published online by Cambridge University Press:  10 February 2011

F. Blecher ,
K. Seibel  and
M. Bohm
F. Blecher
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
K. Seibel
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
M. Bohm
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität-GH Siegen, D-57068 Siegen, Germany
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Abstract

The noise spectra of hydrogenated amorphous silicon pin diodes are measured in the dark and under illumination at reverse and forward bias. The noise coefficients of 1/f noise at different operating points are determined. The superposition of the different noise mechanisms is investigated. A new empirical model and a method to calculate the noise in pin diodes is suggested. Transport and noise mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 175
Copyright
Copyright © Materials Research Society 1998

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References

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