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Phosphorus and Boron Implantation into (100) Germanium

Published online by Cambridge University Press:  17 March 2011

Y. S. Suh ,
M. S. Carroll ,
R. A. Levy ,
A. Sahiner  and
C. A. King
Y. S. Suh
Affiliation:
Materials Science and Engineering, New Jersey Institute of Technology, University Heights, Newark, NJ 07102
M. S. Carroll
Affiliation:
Agere Systems, Allentown PA 18109 (current address: Sandia National Laboratories, P.O. Box 5800, M.S. 1077, Albuquerque, NM 87185)
R. A. Levy
Affiliation:
Materials Science and Engineering, New Jersey Institute of Technology, University Heights, Newark, NJ 07102
A. Sahiner
Affiliation:
Evans East, East Windsor NJ 08520 (current address: Department of Physics, Seton Hall University, South Orange, NJ 07079)
C. A. King
Affiliation:
Noble Device Technologies, Newark, NJ 07103
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Abstract

Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm−2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP). The first four moments were extracted from the as-implanted profile for modeling with Pearson distributions over the entire energy range. The samples were annealed at 400, 600, or 800°C in nitrogen ambient. The dopant activation and diffusion were also examined and it was found that p-type sheet resistances immediately after boron implantation as low as 18 ohms/sq could be obtained without subsequent annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B8.11
Copyright
Copyright © Materials Research Society 2004

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References

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