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Phase Separation During Film Deposition

Published online by Cambridge University Press:  25 February 2011

M. Atzmon ,
C. D. Adams ,
Y.-T. Cheng  and
D. J. Srolovitz
M. Atzmon
Affiliation:
Dept. of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109.
C. D. Adams
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109.
Y.-T. Cheng
Affiliation:
General Motors Research Laboratories, Physical Chemistry Dept., Warren, MI 48090-9055.
D. J. Srolovitz
Affiliation:
Dept. of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109.
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Abstract

We report a study of the microstructure and surface morphology of co-deposited Al-Ge films. At 200 °C and above, the terminal solid solutions are obtained, whereas at lower temperatures, metastable amorphous or crystalline phases coexist with the Al-rich terminal phase. For film thickness below 200 nm, lateral phase separation is observed with surface grooving which reflects the bulk microstructure. Analysis of the data with a model for the diffusion process shows that the results are consistent with a surface diffusion mechanism. For thicker films, there is a transition into a layered microstructure in which Al segregates to the surface. This transition is explained in terms of the surface and interfacial energies of the phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 143
Copyright
Copyright © Materials Research Society 1991

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References

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