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Phase Diagrams for the Optimization of rf Plasma Enhanced Chemical Vapor Deposition of a-Si:H: Variations in Plasma Power and Substrate Temperature

Published online by Cambridge University Press:  17 March 2011

Andre S. Ferlauto ,
Randy J. Koval ,
Christopher R. Wronski  and
Robert W. Collins
Andre S. Ferlauto
Affiliation:
Materials Research Laboratory and Center for Thin Film Devices The Pennsylvania State University, University Park, PA 16802, USA
Randy J. Koval
Affiliation:
Materials Research Laboratory and Center for Thin Film Devices The Pennsylvania State University, University Park, PA 16802, USA
Christopher R. Wronski
Affiliation:
Materials Research Laboratory and Center for Thin Film Devices The Pennsylvania State University, University Park, PA 16802, USA
Robert W. Collins
Affiliation:
Materials Research Laboratory and Center for Thin Film Devices The Pennsylvania State University, University Park, PA 16802, USA
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Abstract

Real time spectroscopic ellipsometry (RTSE) has been applied to characterize surface roughening transitions during the growth of undoped hydrogenated silicon (Si:H) thin films by rf plasma-enhanced chemical vapor deposition (PECVD). In particular, the amorphous–to–amorphous surface roughening transition [→] and the amorphous–to–(mixed-phase-microcrystalline) roughening transition [a→(a+µc)] observed during Si:H growth have been studied under different PECVD conditions of hydrogen dilution ratio R=[H2]/[SiH4], rf plasma power P, and substrate temperature T. For Si:H growth on crystalline Si substrates under the different conditions, phase diagrams have been constructed by plotting the bulk film thicknesses at which these transitions occur as a function of R. The effects of the substrate (c-Si wafers versus amorphous Si:H films) on the a→(a+µc) transition of the phase diagram are also explored. The results provide deeper insights into recent attempts to improve the material properties and solar cell performance for a-Si:H i-layers prepared by rf PECVD at higher rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A5.4
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCE

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