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Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

Published online by Cambridge University Press:  10 February 2011

K. Mourgues ,
F. Raoult ,
L. Pichon ,
T. Mohammed-Brahim ,
D. Briand  and
O. Bonnaud
K. Mourgues
Affiliation:
Groupe de Microélectronique et Visualisation, UPRESA 6076, Université de RENNES I, Campus de Beaulieu, 35042 RENNES cedex, FRANCE
F. Raoult
Affiliation:
Groupe de Microélectronique et Visualisation, UPRESA 6076, Université de RENNES I, Campus de Beaulieu, 35042 RENNES cedex, FRANCE
L. Pichon
Affiliation:
Groupe de Microélectronique et Visualisation, UPRESA 6076, Université de RENNES I, Campus de Beaulieu, 35042 RENNES cedex, FRANCE
T. Mohammed-Brahim
Affiliation:
Groupe de Microélectronique et Visualisation, UPRESA 6076, Université de RENNES I, Campus de Beaulieu, 35042 RENNES cedex, FRANCE
D. Briand
Affiliation:
Groupe de Microélectronique et Visualisation, UPRESA 6076, Université de RENNES I, Campus de Beaulieu, 35042 RENNES cedex, FRANCE
O. Bonnaud
Affiliation:
Groupe de Microélectronique et Visualisation, UPRESA 6076, Université de RENNES I, Campus de Beaulieu, 35042 RENNES cedex, FRANCE
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Abstract

Low Temperature Unhydrogenated in-situ doped polysilicon Thin Film Transistors (LTUTFT) are made through two types of four-mask aluminium gate process. Silicon layers are elaborated by a Low Pressure Chemical Vapor Deposition (LPCVD) method and crystallized by a thermal annealing. Source and drain regions are in-situ doped. An Atmospheric Pressure Chemical Vapor Deposition (APCVD) silicon dioxide ensures the gate insulation. Two structures A and B are fabricated, the difference is that for sample B the undoped/doped polysilicon layer interface is suppressed.

The structure of the polysilicon films is studied using Transmission Electron Microscopy (TEM) and Current-Voltage characteristics of both types of TFTs indicate electrical quality of the polysilicon films.

The best electrical properties are obtained with the B type TFTs: a low threshold voltage (VT=1.2V), a low subthreshold slope (0.7 V/dec), a high On/Off state current ratio (107) for a drain voltage VDS= 1V, and a very high field effect mobility (≥100 cm2 /Vs). It is worth to notice that these good results are obtained without hydrogenation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 155
Copyright
Copyright © Materials Research Society 1997

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References

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