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Performance Characteristics of N-Type SI-SI/GE Quantum well Infrared Photodetectors

Published online by Cambridge University Press:  15 February 2011

V. D. Shadrin ,
V. T. Coon  and
F. L. Serzhenko
V. D. Shadrin
Affiliation:
Microtronics Associates, 4516 Henry St., Pittsburgh, PA 15213
V. T. Coon
Affiliation:
Microtronics Associates, 4516 Henry St., Pittsburgh, PA 15213
F. L. Serzhenko
Affiliation:
Institute for Applied Physics, Moscow, 111123, Russia
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Abstract

The theory of multiple quantum well n-type Si-SiGe IR detectors is presented. The coefficient of photoabsorption, quantum efficiency and responsivity of Si-SiGe quantum well detector are calculated taking in consideration the effects of depolarization and electron-electron exchange interaction. We show that the Si-SiGe quantum well detectors possess lower dark current and better performance characteristics compared to GaAs-AlGaAs photodetectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 273
Copyright
Copyright © Materials Research Society 1994

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References

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