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Performance and Spectral Response of Far-Infrared Pb1−xSnxTe(In) Photodetectors

Published online by Cambridge University Press:  10 February 2011

I. Ivanchik ,
D. Khokilov ,
J. Pipher ,
N. Raines  and
D. Watson
I. Ivanchik
Affiliation:
Physics Department, Moscow State University, Moscow 119899, Russia
D. Khokilov
Affiliation:
Physics Department, Moscow State University, Moscow 119899, Russia, khokhlov@mig.phys.msu.su
J. Pipher
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY
N. Raines
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY
D. Watson
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY
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Abstract

Direct comparison of performance has been done for a Pb1−xSnxTe(In) photodetector, a Si(Sb) BIB structure and a state of the art Ge(Ga) photoconductor in the integration cavity. The PblSnTe(In) photodetector shows several orders of magnitude higher responsivity S, then the Si(Sb) BIB at the wavelength λ ∼ 14 µm. Persistent photoresponse with SI ∼ 103 A/W at 40 mV bias and 1 s integration time at the wavelengths of, λ = 90 and 116 µm has been observed for the first time for the Pb1−xSnxTe(In) photodetector. This value is by a factor of ∼ 100 higher than the respective parameters of the Ge(Ga) photoconductor in the same conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 169
Copyright
Copyright © Materials Research Society 2000

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