Hostname: page-component-77c89778f8-cnmwb Total loading time: 0 Render date: 2024-07-18T13:35:48.700Z Has data issue: false hasContentIssue false
  • English
  • Français

Peculiarities of Zn Diffusion from Polymer Spin-on Films in AlGaAs

Published online by Cambridge University Press:  10 February 2011

A.V. Kamanin ,
A.M. Mintairov  and
N.M. Shmidt
A.V. Kamanin
Affiliation:
Ioffe Physico-Technical Institute, St.Petersburg, Russia
A.M. Mintairov
Affiliation:
Ioffe Physico-Technical Institute, St.Petersburg, Russia
N.M. Shmidt
Affiliation:
Ioffe Physico-Technical Institute, St.Petersburg, Russia
Get access

Abstract

Zn diffusion into AlxGa1−xAs from polymer spin-on films has been investigated. An increase in Zn diffusivity has been observed with increase in the content of Al in A1GaAs compounds. The effect has been related to more coefficient of self-diffusion for Al than for Ga. The availability of the near-surface layer enriched with Al in epitaxial AlGaAs wafers has been found to result in poor reproducible diffusion characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 215
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Campbell, D.R. and Shih, K.K., Appl. Phys. Lett., 19, 330 (1971).Google Scholar
2. Boltaks, B.I., Dzhafarov, T.D., Demakov, Yu.P., Maronchuk, I.E., Sov. Phys. Semicond., 9, 545 (1975).Google Scholar
3. Lee, C.P., Margalit, S., Yariv, A., Solid St. Electron., 21, 905 (1978).Google Scholar
4. Ageno, S.K., Roedel, R.J., Mellen, N., Escher, J.S., Appl. Phys. Lett., 47, 1193 (1985).Google Scholar
5. Quintana, V., Clemencon, J.J., Chin, A.K., J. Appl. Phys., 63, 2454 (1988).Google Scholar
6. Tachikawa, M., Mazuta, M., Kukimoto, H., Jap. J. Appl. Phys., Part 1, 23, 1594 (1984).Google Scholar
7. Busygina, L.A., Gorelenok, A.T., Kamanin, A.V., Mokina, I.A., Shmidt, N.M., Yurre, T.A., Yakimenko, I.Yu., Patent of Russia No. 2050031 (21 June 1993).Google Scholar
8. Kamanin, A.V., Mokina, I.A., Shmidt, N.M., Busygina, L.A., Yurre, T. A., Proc. 8th Intern. Conf. on InP and Related Compounds, Schwibisch Gmtind, Germany, p. 334–337 (1996).Google Scholar
9. Mintairov, A.M., Smekalin, K.E., Ustinov, V.M., Khvostikov, V.P., Sov. Phys. Semicond. 26, 347 (1992).Google Scholar