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Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching

Published online by Cambridge University Press:  10 February 2011

J. W. Lee ,
S. J. Pearton ,
C. R. Abernathy ,
R. G. Wilson ,
B. L. Chai ,
F. Ren  and
J. M. Zavada
J. W. Lee
Affiliation:
University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
University of Florida, Gainesville FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Gainesville FL 32611
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu CA 90265
B. L. Chai
Affiliation:
CREOL, University of Central Florida, Orlando FL 32816
F. Ren
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill NJ 07974
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Park NC 27709
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Abstract

LiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in a number of acid solutions, including HF, at rates between 150–40,000 Å/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl2/Ar or CH4/H2/Ar under Electron Cyclotron Resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metalorganic/hydride counterparts. Dry etch rates are low ( < 2, 000 Å/min), providing high selectivity (>5) over the nitrides. The incorporation of hydrogen in these materials is also of interest because this could provide a reservoir of hydrogen that may passivate dopants in overlying nitride films. In 2H implanted samples, 50 % of the deuterium is lost by evolution from the surface by annealing at 400 °C for 20 min and all of the deuterium is gone at 700°C. The diffusivity of 2H is ∼10-13 cm2/s at 250°C in LiA1O2, approximately two orders of magnitude higher than in LiGaO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1041
Copyright
Copyright © Materials Research Society 1997

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