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Passivating Complexes in Cd Doped G a As and InP: Microscopic Properties and Electrical Effects

Published online by Cambridge University Press:  03 September 2012

N. Moriya ,
M. Deicher ,
R. Kalish ,
R. Keller ,
R. Magerle ,
W. Pfeiffer ,
P. Pross ,
H. Skudlik ,
Th. Wichert  and
H. Wolf
...Show all authors
N. Moriya
Affiliation:
Physics Department and Solid State Institute, Technion, Haifa 32000, Israel
M. Deicher
Affiliation:
Fakultät für Physik, Universität Konstanz, D-7750 Konstanz, Germany
R. Kalish
Affiliation:
Physics Department and Solid State Institute, Technion, Haifa 32000, Israel
R. Keller
Affiliation:
Fakultät für Physik, Universität Konstanz, D-7750 Konstanz, Germany
R. Magerle
Affiliation:
Fakultät für Physik, Universität Konstanz, D-7750 Konstanz, Germany
W. Pfeiffer
Affiliation:
Fakultät für Physik, Universität Konstanz, D-7750 Konstanz, Germany
P. Pross
Affiliation:
Fakultät für Physik, Universität Konstanz, D-7750 Konstanz, Germany
H. Skudlik
Affiliation:
Fakultät für Physik, Universität Konstanz, D-7750 Konstanz, Germany
Th. Wichert
Affiliation:
Technische Physik, Universität des Saarlandes, D-6600 Saarbrücken, Germany
H. Wolf
Affiliation:
Technische Physik, Universität des Saarlandes, D-6600 Saarbrücken, Germany
Isolde Collaboration
Affiliation:
CERN, CH-1211 Geneva 23, Switzerland
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Abstract

Perturbed Angular Correlation (PAC) and Hall measurements were used to investigate the stability of the passivating Cd-H complex in GaAs after low energy H implantation (150 eV, 1014 cm−2) at 300 K. From the observed Cd-H pair formation and reduction of hole concentration it is deduced that about 10 % of the implanted H atoms form pairs with the Cd atoms. The influence of the dopant depth profile on the apparent stability in zero bias isochronal annealing experiments is reported. After H loading a reduction of carrier mobility is observed, which is stable up to about 400 K. The formation of Cd-H pairs after low energy H implantation into InP was studied by PAC. By measuring the fraction of pairs in an isochronal annealing experiment, the stability of the pairs is deduced yielding a dissociation energy of ED = 1.8 (1) eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 431
Copyright
Copyright © Materials Research Society 1992

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References

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