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Particle - Induced and Photo - Conductivities in Amorphous Si:H Under Proton Irradiation

Published online by Cambridge University Press:  15 February 2011

N. Kishimoto ,
H. Amekura ,
K. Kono  and
T. Saito
N. Kishimoto
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
H. Amekura
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
K. Kono
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
T. Saito
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
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Abstract

Radiation damage of amorphous Si (a- Si) under 17 MeV- proton bombardment has been studied, measuring particle- induced conductivity(PIC) and photoconductivity(PC). The in- situ measurements have been conducted to focus on the structural flexibility and the metastable nature, inherent in the amorphous structure. While the PC (with weak illumination) has a fast response and reversible nature, the PIC has a long time- constant ∼60 s, followed by a persistent conductivity for more than ∼103 s. Both the PIC and the PC remain fairly stable against further irradiation, comparing to crystalline Si (c-Si), but they decay in the higher fluence region. A large part of the decayed PC recovers after annealing at 450 K. The results of a- Si are compared with those of c- Si. It is suggested that, in the lower fluence region, a-Si is more resistant against proton irradiation than c- Si, relaxing the atomic displacements, and the excited conductivities gradually decay with accumulation of the dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 679
Copyright
Copyright © Materials Research Society 1997

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References

1. Young, R.C. and Corelli, J.C., Phys. Rev. B, 5, 1455 (1972).Google Scholar
2. Cheng, L.J. and Swanson, M.L., J. Appl. Phys. 41, 2627 (1970).Google Scholar
3. Corbett, J.W., Watkins, G.D., Chrenko, R.M. and McDonald, R.S., Phys. Rev. 121, 1015 (1961).Google Scholar
4. Whan, R.E. and Vook, F.L., Phys. Rev. 153, 814 (1967).Google Scholar
5. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
6. Shimakawa, K., Kolobov, A. and Elliot, S.R., Adv. in Phys. 44, 475 (1995).Google Scholar
7. Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B, 32, 23 (1985).Google Scholar
8. Adler, D., Phys. Rev. Lett. 25, 1755 (1978).Google Scholar
9. Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985), Chap. 8.Google Scholar
10. Van Vechten, J.A., Inst. Phys. Conf. Ser. No. 31, 441 (1977).Google Scholar
11. Amekura, H., Kishimoto, N., Kono, K. and Saito, T., J. Appl.Phys. 77, 4984 (1995).Google Scholar
12. Amekura, H., Kishimoto, N., Kono, K., unpublished data.Google Scholar
13. Amekura, H., Kishimoto, N., Kono, K. and Saito, T., Mater. Sci. Forum 196- 201, 1159 (1995).Google Scholar