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Parameterization of Transient Models of Defect Dynamics in Czochralski Silicion Crystal Growth

Published online by Cambridge University Press:  17 March 2011

Talid Sinno ,
Thomas Frewen ,
Erich Dornberger ,
Robert Hoelzl  and
Christian Hoess
Talid Sinno
Affiliation:
Department of Chemical Engineering, University of Pennsylvania, Philadelphia, PA 19104
Thomas Frewen
Affiliation:
Department of Chemical Engineering, University of Pennsylvania, Philadelphia, PA 19104
Erich Dornberger
Affiliation:
Wacker Siltronic AG Burghausen D84479, Germany
Robert Hoelzl
Affiliation:
Wacker Siltronic AG Burghausen D84479, Germany
Christian Hoess
Affiliation:
Wacker Siltronic AG Burghausen D84479, Germany
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Abstract

A transient model for point defect dynamics during Czochralski silicon crystal growth is parameterized using detailed experimental data generated under varying crystal growth conditions. Simulated Annealing is used to perform the model parameterization because of the complex nature of the defined objective functions. It is shown that the method is robust and despite the computational expense associated with a large number of function evaluations, can be readily used in multiple dataset, multiple objective function environments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 700: Symposium S – Combinatorial and Artificial Intelligence Methods in Materials Science , 2001 , S8.3
Copyright
Copyright © Materials Research Society 2002

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