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Oxygen-Doped-Silicon/Silicon Heterointerfaces by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

K. Srikanth  and
S. Ashok
K. Srikanth
Affiliation:
Center for Electronic Materials & Processing, and Department of Engineering Science & Mechanics, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Center for Electronic Materials & Processing, and Department of Engineering Science & Mechanics, The Pennsylvania State University, University Park, PA 16802
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Abstract

We have investigated oxygen ion implantation at substoichiometric doses for bandgap modification in silicon. Redistribution of the oxygen atoms during the high temperature anneal results in sharp interfaces aiding the formation of a heterojunction. A most interesting observation is the presence of donors in the vicinity of the implanted region, resulting in extensive counterdoping. Mesa type diodes on the implanted sample exhibit excellent rectification with a diode ideality factor n of 1.2 and a reverse saturation current density of 1 × 10−8 A/cm 2. The near surface region is shown to be crucial for achieving the high rectification behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 369
Copyright
Copyright © Materials Research Society 1992

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References

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