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Oxygen and Nitrogen Incorporation During Cw Laser Recrystallization of Polysilicon

Published online by Cambridge University Press:  15 February 2011

C.I. Drowley  and
T.I. Kamins
C.I. Drowley
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304.
T.I. Kamins
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304.
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Abstract

The incorporation of nitrogen and oxygen in polysilicon has been examined by SIMS. The analysis, combined with C-V measurements and ion implantation, has been used to correlate the incorporation of the two species with the fixedcharge density at the back polysilicon/Si02 interface. Laser recrystallization with a silicon-nitride encapsulation layer results in the inclusion of 2–4 × 1017 cm−3 nitrogen atoms in the polysilicon; if an oxide capping layer is used, the nitrogen level observed is at the background of the SIMS system (~1015cm−3). Either type of capping layer results in 3−4×1018cm−3 oxygen atoms being incorporated into the polysilicon. Implantation of nitrogen into the polysilicon before recrystallization increases the fixed-charge density Nf,b) at the back interface, while implanted oxygen decreases Nf, b. The high Nf, b found with a nitride capping layer is attributed to deposition of nitrogen or SiNx at the back interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 511
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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