Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-10T02:02:10.626Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation Resistant Dilute Copper (Boron) Alloy Films Prepared by DC-Magnetron Cosputtering

Published online by Cambridge University Press:  15 February 2011

S. Hymes ,
K. S. Kumar ,
S. P. Murarka ,
W. Wang  and
W. A. Lanford
S. Hymes
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy,NY 12180
K. S. Kumar
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy,NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy,NY 12180
W. Wang
Affiliation:
Department of Physics, The University at Albany - SUNY, Albany, NY 12222
W. A. Lanford
Affiliation:
Department of Physics, The University at Albany - SUNY, Albany, NY 12222
Get access

Abstract

To enhance the corrosion resistance and reliability of the proposed copper interconnections in silicon integrated circuits, alloying with small amounts thermodynamically favorable elements has been pursued. In the present investigation dilute copper (boron) alloy thin films (in boron concentration range of 0–4 at % in copper) were deposited by DC magnetron co-sputtering using a high purity copper and Cu-4 at. % B targets. Films were then annealed in Ar-3% H2, pure Ar, vacuum, and air ambients in the temperature range of 200–500°C. Sheet resistance, Rutherford backscattering, x-ray diffraction measurements were made to characterize the films. The residual resistivity of the as-deposited alloy films was found to be 5.3 μΩ-cm/at %. To obtain sufficiently low working resistivity, an alloy content below 0.5 at % is suggested for application as a potential metallization material. The addition of boron, which is the common dopant in Si. to the copper films offers considerable oxidation protection. The resulting oxidation rates are considerably lower than that for pure copper films. All this will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 17
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Murarka, S.P. and Hymes, S.W., CRC Critical Reviews in Solid State and Materials Sciences, 20(2), 87 (1995).Google Scholar
2. Li, J., Shacham-Diamond, Y. and Mayer, J.W., Mat. Sci. Reports, 9, 1 (1992).Google Scholar
3. Murarka, S.P., in Workshop on Tungsten and Other Advanced Metals for ULSI Applications VI, Dallas, TX, Oct. 22–24 (1990), ed. Smith, G.C. nad Blumenthal, R. (MRS Pittsburgh, 1991), p. 179.Google Scholar
4. Murarka, S.P., Gutmann, R.J.. Kaloyeros, A.E., and Lanford, W.A., Thin Solid Films, 236, 257 (1993).Google Scholar
5. See articles in MRS Bulletin, 19(8), 1994.Google Scholar
6. Hymes, S., Murarka, S.P., Shepard, C. and Lanford, W.A., J. Applied Physics, 71(9), 4623 (1992).Google Scholar
7. Ding, P.J., Lanford, W.A., Hymes, S. and Murarka, S.P.. J. Applied Physics, 74, 1331 (1993).Google Scholar
8. Ding, P.J., Lanford, W.A., Hymes, S. and Murarka, S.P., Mat. Res. Soc. Symp., 260, 757 (1992).Google Scholar
9. Ding, P.J., Wang, W., Lanford, W.A., Hymes, S. and Murarka, S.P., International Conference on Ion Beam Analysis, Balafontured, Hungary, July 5–9, 1993. Nuclear Instruments and Methods in Physics Research, B 85, 260 (1994).Google Scholar
10. Lanford, W.A., Ding, P.J., Hymes, S. and Muraira, S.P.. Mat. Res. Soc. Symp., 337, 169 (1994).Google Scholar
11. Ding, P.J., Zheng, B., Eisenbraun, E.T., Lanford, W.A.. Kaloyeros, A.E., Hymes, S. and Murarka, S.P., Proc. MRS, Spring 1993.Google Scholar
12. Wang, W., Ding, P.J., Lanford, W.A., Hymes, S. and Murarka, S.P., Appl. Phys. Lett. (Unpublished).Google Scholar
13. Ding, P.J.. Lanford, W.A., Hymes, S. and Murarka, S.P.. Appl. Phys. Lett., 64, 2897 (1994).Google Scholar
14. Wang, W., Ding, P.J., Lanford, W.A., Hymes, S. and Murarka, S.P., Appl. Phys. Len. (Unpublished).Google Scholar
15. Wang, W., Ding, P.J., Shepard, C.L., Lanford, W.A., Hymes, S. and Murarka, S.P., Proc. MRS, Fall 1994.Google Scholar
16. Ding, P.J., Lanford, W.A., Hymes, S. and Murarka, S.P., J. Applied Physics, 75 (7), 3627 (1994).Google Scholar
17. Ding, P.J., Wang, W., Lanford, W.A., Hymes, S. and Murarka, S.P., Appl. Phys. Lett., 65, 1778 (1994).Google Scholar
18. Murarka, S.P., Neirynck, J.M., Lanford, W.A., Wang, W., and Ding, P.J., Proc. of SPIE Conference, “Microelectrorucs Technology and Process Integration”, Ed. Chen, Fusen E. and Murarka, S.P. (SPIE vol. 2335, 1994) p. 80.Google Scholar
19. Lanford, W.A., Burman, C., Doremus, R.H., Mehotra, Y., and Wassick, T., in “Advances in Materials Characterization”, ed. Rossington, D.R., Condrate, R.A., and Snyder, R.L. (Plenum, 1983), p. 549.Google Scholar
20. Arcot, B., Murarka, S.P., Clevenger, L.A., Hong, Q.Z., Ziegler, W., and Harper, J.M.E., J. Applied Physics, 76, 5161 (1994).Google Scholar
21. Shy, Y.-T., Ph.D. Thesis, RPI (1993).Google Scholar
22. Selected Powder Diffraction Data – Metals and Alloys Data Book, (JCPDS, Swarthmore. PA, 1978).Google Scholar