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Oxidation of Silicon and Nitridaticn of SiO2 by Rapid Thermal Processes

Published online by Cambridge University Press:  28 February 2011

N. Chan Tung ,
Y. Caratini  and
J.L. Buevoz
N. Chan Tung
Affiliation:
Centre National d'Etudes des Télécommunications, Meylan, France
Y. Caratini
Affiliation:
Atelier Electro Thermie, Zirst, Meylan,France
J.L. Buevoz
Affiliation:
Centre National d'Etudes des Télécommunications, Meylan, France
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Abstract

Thin gate oxides of 30 to 150 Å have been grown in a rapid thermal annealing machine. Experiments were performed in the temperature range of 1000 to 1250°C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energy Ea of 1.4 eV for the 5-60 s period. The oxide homogeneity was evaluated and gave a value of 1.9 A for a mean oxide thickness of 102 A. The electrical characteristics of Al-gate capacitors were assessed by C-V and I-V measurements. Rapid thermal nitridation of a 96 A SiO2 has been performed at a temperature of 1150°C for a nitridaticn time up to 150 s. An average breakdown field of 14.6 MV/cm has been obtained for MIS capacitors. High resolution TEM show a good interface SioXNY-Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 147
Copyright
Copyright © Materials Research Society 1987

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References

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