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Oxidation of Semiconducting Iron Disilicide (β-FeSi2)

Published online by Cambridge University Press:  25 February 2011

Nils Lundberg ,
U. Erlesand  and
M. Östling
Nils Lundberg
Affiliation:
Royal Institue of Technology, Solid State Electronics, KTH-Electrum, Box 1298, 164 28, Kista, Sweden
U. Erlesand
Affiliation:
Royal Institue of Technology, Solid State Electronics, KTH-Electrum, Box 1298, 164 28, Kista, Sweden
M. Östling
Affiliation:
Royal Institue of Technology, Solid State Electronics, KTH-Electrum, Box 1298, 164 28, Kista, Sweden
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Abstract

Iron disilicide (β-FeSi2) has gained significant importance in recent years because of its semiconducting properties. The bandgap is reported to be direct with an energy of 0.85–0.89 eV, thus making the suicide a potential candidate for optical communications and detector applications. Compatibility with standard VLSI processing might involve a suicide thermal oxidation step. This work concerns the kinetics of both dry and wet oxidations of β-FeSi2. The oxide quality was characterized with respect to the electrical breakdown voltage. The results indicate an oxidation temperature dependence of the oxide quality and that dry oxidation yield higher breakdown voltage than wet oxidation. Structural and semiconducting suicide properties were investigated before and after oxidation. High energy implantation of xenon was used in a marker experiment to investigate a possible change of oxidation mechanism between dry and wet oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 417
Copyright
Copyright © Materials Research Society 1992

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References

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