Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-23T23:28:36.797Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation Kinetics Of Crystalline Silicon Oxynitride

Published online by Cambridge University Press:  10 February 2011

D. Manessis  and
H. Du
D. Manessis
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, HobokenNJ 07030
H. Du
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, HobokenNJ 07030
Get access

Abstract

Oxidation stability of silicon oxynitride is a property of great technological significance. In this study, the oxidation behavior of stoichiometric polycrystalline Si2N2O was investigated in 1 and 0.5 atm flowing dry oxygen at 1000°‐1300°C. The oxidized Si2N2O samples were characterized using transmission and scanning electron microscopy. The oxidation kinetics were determined using profilometry in conjunction with patterned etching. Oxidation of Si2N2O resulted in the formation of amorphous SiO2. The SiO2‐Si2N2O interface was chemically and structurally abrupt. A parabolic rate law was followed during oxidation with apparent activation energies ranging from 43 to 52 kcal/mol. The relatively high activation energy values compared to that for silicon oxidation suggest that oxidation of Si2N2O is rate‐controlled by a more complex process than molecular oxygen diffusion in amorphous SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 127
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Habraken, F.H.M. and Kuiper, A.E.T., Mat. Sci. and Eng., 12, 123–175 (1994).Google Scholar
2 Ma, Y., Hattangary, S.V., Yasuda, T., Niimi, H., Gandhi, S., and Lucovsky, G., MRS Symp. Proc, 342 169–174 (1994).Google Scholar
3 Aoyama, T., Suzuki, K., Tashiro, H., Toda, Y., Yamazaki, T., Arimoto, Y., and Ito, T., J. Electrochem. Soc, 140, [12] 3624–3630 (1993).Google Scholar
4 Kuiper, A.E.T., Willemsen, M.F.C., Mulder, J.M.L., OudeElferink, J.B., Habraken, F.H.P.M., and van der Weg, W.F., J. Vac. Sci. Technol. B, 7 [3] 455–465 (1989).Google Scholar
5 Habraken, F.H.P.M. and Kuiper, A.E.T., Thin Solid Films, 193/194 665–674 (1990).Google Scholar
6 Murarka, S.P., Chang, C.C., and Adams, A.C., J. Electrochem. Soc, 126 [6] 996–1003 (1979).Google Scholar
7 Persson, J., Kall, P‐O, Nygren, M., J. Am. Ceram. Soc., 75 [12] 3377–84 (1992).Google Scholar
8 Du, H., Tressler, R.E., and Spear, K.E., J. Electrochem. Soc, 136 [11] 3210–5 (1989).Google Scholar
9 Ogbuji, L.U.J.T., J. Am. Ceram. Soc, 75 [11] 2995–3000 (1992).Google Scholar
10 Manessis, D., Du, H., Singer, I.L., and Larker, R., MRS Symp. Proc, 410 393–398 (1996).Google Scholar
11 Deal, B.E. and Grove, A.S., J. Appl. Phys., 36 3770–3778 (1968).Google Scholar
12 Lupis, H.P., Chemical Thermodynamics of Materials, North Holland, New York, 1983.Google Scholar
13 Luthra, K., J. Electrochem. Soc., 138 [10] 3001–3007 (1991).Google Scholar