Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T14:19:14.769Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

Published online by Cambridge University Press:  28 February 2011

Randall J. Carolissen  and
R. Pretorius
Randall J. Carolissen
Affiliation:
Physics Dept., Univ. of the Western Cape, Private Bag X17, BELLVILLE 7535, South Africa
R. Pretorius
Affiliation:
Ion-Solid Interaction Division, Van de Graaff Group, National Accelerator Centre, P.O. Box 72, FAURE 7131, South Africa
Get access

Abstract

Severe oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 191
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Hill, C., Butler, A.L. and Daly, J.A. in Laser and Electron-Beam Interactions with Solids, edited by Appleton, B.R. and Celler, G.K., (Mater. Res. Soc. Proc. 4, Pittsburg, PA 1982),pp 579–584 Google Scholar
[2] Fogarrassy, E., Stuck, R., Grob, J.J. and Siffert, P., J. Appl. Phys. 52, 1076 (1981).Google Scholar
[3] Stuck, R., Fogarassy, E., Muller, J.C., Hodeau, M., Wattiaux, A. and Siffert, P., Appl. Phys. Lett. 38, 715 (1981).Google Scholar
[4] Carolissen, R.J., Knoesen, D., Sinke, W. and Pretorius, R., J. Mater. Res. submittedGoogle Scholar
[5] Cullis, A.G., Webber, H.C., and Bailey, P., J. Phys. E.: Sci. Instrum. 12, 688 (1979).Google Scholar
[6] Orlowski, T.E. and Richter, H., Appl. Phys. Lett. 45, 241 (1984).Google Scholar
[7] White, C.W., Pronko, D.P., Wilson, S.R., Appleton, B.R., Narayan, J. and Young, R.T., J. Appl. Phys. 50, 3261 (1979).Google Scholar
[8] Celler, G.K., Leamy, H.J., Aspnes, D.E., Doherty, C.J., Sheng, T.T. and Trimble, L.E. L.E., in Laser and Electron Beam Solid Interactions and Materials Processing, edited by Gibbsons, J.F., Hess, L.P. and Sigmon, T.W., (Mater. Res. Soc. Proc. 1, Pittsburg, PA 1981),pp 435–442 Google Scholar
[9] Gonzalez-Hernandez, J., Martin, D., Chao, S.S. and Tsu, R., Appl. Phys. Lett. 45, 101 (1984).Google Scholar
[10] Ghandhi, S.K., VLSI Fabrication Principles, Silicon and Gallium Arsenide, 1st ed. (Wiley and Sons, New York 1982),p. 606.Google Scholar
[11] Aspnes, D.E., Poate, J.M., Rozgonyi, G.A., Sheng, T.T. and Celler, G., presented at Symposium on Laser and Electron Beam Processing of Electronic Materials, Electrochemical Society, Los Angeles, (1979), unpublished.Google Scholar
[12] Bean, J.C. and Poate, J.M., Appl. Phys. Lett. 36, 59 (1980).Google Scholar
[13] Foti, G., Bean, J.C., Poate, J.M. and Magee, C.W., Appl. Phys. Lett. 36, 840 (1980).CrossRefGoogle Scholar
[14] Liu, Y.S., Chiang, S.W. and Bacon, F., Appl. Phys. Lett. 38, 1005 (1981).Google Scholar
[15] Marais, T.K., Allie, M.S., Pretorius, R. and Shackleton, M.O., S. Afr. J. of Phys. 13, 103 (1990).Google Scholar