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Oscillatory Angular Dependence of Exchange Bias for Epitaxial NiO-Co (001) Bilayers

Published online by Cambridge University Press:  21 March 2011

S. Dubourg ,
J.F. Bobo ,
B. Warot ,
E. Snoeck  and
J.C. Ousset
S. Dubourg
Affiliation:
LPMC, CNRS-INSA-UPS 5830 135, 31077 Toulouse Cedex 4, France
J.F. Bobo
Affiliation:
LPMC, CNRS-INSA-UPS 5830 135, 31077 Toulouse Cedex 4, France
B. Warot
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig 31055 Toulouse Cedex 4, France
E. Snoeck
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig 31055 Toulouse Cedex 4, France
J.C. Ousset
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig 31055 Toulouse Cedex 4, France
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Abstract

We have sputter-deposited NiO-Co bilayers on MgO (001) substrates. NiO grows epitaxially on MgO at 900°C and subsequently the room deposited 80 Åthick Co films have a fcc crystal structure in epitaxy with the oxide underlayer. These samples were warmed up to 300° C and then zero-field or field cooled through the NiO Néel temperature (a 300 Oe magnetic field was applied along the [100] or the [110] MgO axis). Magnetic hysteresis loops were obtained by magneto-optical Kerr effect, the magnetic field being oriented in the plane of the substrate for various angles α with respect to the [100] direction. The usually expected behavior for such experiments is a smooth angular α dependence of the exchange bias HE close to a cosine with only one sign change over 180°. The high crystallographic coherence of our NiO/Co bilayers induces a very unusual oscillatory HE (α) dependence with several sign changes according to the NiO axis field application. Despite of the Co magnetization switching mechanism which is not a pure coherent rotation, we propose a Stoner-Wohlfhart model including four fold anisotropy and unidirectional exchange anisotropy giving a realistic description of these typical magnetic properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 674: Symposia T/U/V – Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics , 2001 , T1.6
Copyright
Copyright © Materials Research Society 2001

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References

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